Parameter |
Symbol |
Rating |
Units |
|
Power Supply |
VCC |
-0.3 to +6.0 |
V |
|
Positive Output Supply Voltage (Note 2) |
V+ |
-0.3 to +7.0 |
V |
|
Negative Output Supply Voltage (Note 2) |
V- |
+0.3 to -7.0 |
V |
|
Supply Voltage Difference (Note 2) |
V+ - V- |
+13 |
V |
|
Input Voltage |
Drivers |
VIN |
-0.3 to +6.0 |
V |
Receivers |
-25 to +25 |
|||
Output Voltage |
Drivers |
VOUT |
-13.2 to +13.2 |
V |
Receivers |
-0.3 to VCC+0.3 |
|||
Operating Junction Temperature |
TJ |
-40 to +85 |
℃ |
|
Storage Temperature |
TSTG |
-65 to +150 |
℃ |
Notes:
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. All voltages are with respect to network GND.
Parameter |
Symbol |
Conditions |
MIN |
TYP |
MAX |
UNITS |
||
Input leakage current |
IIN |
DIN |
- |
±0.01 |
±1 |
μA |
||
Supply current |
ICC |
No Load |
- |
0.3 |
1.0 |
mA |
||
Driver |
||||||||
High-Level Output Voltage |
VOH |
DOUT at RL = 3 kΩ to GND, DIN = GND |
+5.0 |
+5.4 |
- |
V |
||
Low-Level Output Voltage |
VOL |
DOUT at RL = 3 kΩ to GND, DIN = VCC |
-5.0 |
-5.4 |
- |
V |
||
High-Level Input Current |
IOH |
VI = VCC |
- |
±0.01 |
±1 |
μA |
||
Low-Level Input Current |
IOL |
VI at GND |
- |
±0.01 |
±1 |
μA |
||
Short-Circuit Output Current (Note 2) |
IOS |
VCC = 3.6 V, VOUT = 0 V |
- |
±35 |
±60 |
mA |
||
VCC = 5.5 V, VOUT = 0 V |
- |
±35 |
±60 |
|||||
Output Resistance |
rO |
VCC, V+ and V- = 5.5 V, |
300 |
10M |
- |
Ω |
||
Output Leakage Current |
IOFF |
VCC = 3.0 V to 5.5 V, |
- |
- |
±25 |
μA |
||
Receiver |
||||||||
High-Level Output Voltage |
VOH |
IOH = -1.0 mA |
Vcc – 0.6V |
Vcc – 0.1V |
- |
V |
||
Low-Level Output Voltage |
VOL |
IOL = 1.6 mA |
- |
- |
0.4 |
mV |
||
Positive-Going Input Threshold Voltage |
VIT+ |
VCC = 3.3 V |
- |
1.5 |
2.4 |
V |
||
VCC = 5.0V |
- |
1.8 |
2.4 |
|||||
Negative-Going Input Threshold Voltage |
VIT- |
VCC = 3.3 V |
0.6 |
1.2 |
- |
V |
||
VCC = 5.0V |
0.8 |
1.5 |
- |
|||||
Input Hysteresis |
VHYS |
VIT+ to VIT- |
- |
0.3 |
- |
V |
||
Output Leakage Current |
IOFF |
- |
- |
±0.05 |
±10 |
μA |
||
Input Resistance |
RI |
VI =±3.0 V to ±25V |
3 |
5 |
7 |
kΩ |
Notes:
1. All typical values are at VCC=3.3V or VCC=5.0V, and TA=25°C.
2. Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output should be shorted at a time.
3. Test conditions are C1~C4=0.1μF at VCC=3.3V±0.3V; C1=0.047μF, C2~C4=0.33μF at VCC=5.0V±0.5V.
4. Pulse skew is defined as |tPLH−tPHL| of each channel of the same device.
Parameter |
Symbol |
Conditions |
MIN |
TYP |
MAX |
UNITS |
|
Driver |
|||||||
Maximum Data Rate |
- |
CL = 1000 pF, RL = 3 kΩ, One Driver Switching |
150 |
250 |
- |
Kbit/s |
|
Pulse Skew (Note 4) |
tSK(P) |
CL = 220 pF to 2500 pF, RL = 3 kΩto 7 kΩ |
- |
300 |
- |
ns |
|
Slew Rate, Transition Region |
SR(tr) |
RL = 3 kΩto 7 kΩ, VCC = 3.3 V |
CL = 220 pF to 1000 pF |
5 |
- |
35 |
V/μs |
CL = 220 pF to 2500 pF |
3 |
- |
35 |
||||
Receiver |
|||||||
Propagation Delay Time, Low to High-Level Output |
tPLH |
CL = 150 pF |
- |
300 |
- |
ns |
|
Propagation Delay Time, High to Low-Level Output |
tPHL |
CL = 150 pF |
- |
300 |
- |
ns |
|
Output Enable Time |
tEN |
CL = 150 pF, RL = 3 kΩ |
- |
200 |
- |
ns |
|
Output Disable Time |
tDIS |
CL = 150 pF, RL = 3 kΩ |
- |
200 |
- |
ns |
|
Pulse Skew (Note 4) |
tSK(P) |
| tPLH - tPHL | |
- |
300 |
- |
ns |
Notes:
1. All typical values are at VCC=3.3V or VCC=5.0V, and TA=25°C.
2. Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output should be shorted at a time.
3. Test conditions are C1~C4=0.1μF at VCC=3.3V±0.3V; C1=0.047μF, C2~C4=0.33μF at VCC=5.0V±0.5V.
4. Pulse skew is defined as |tPLH−tPHL| of each channel of the same device.
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