Rating

Symbol

Value

Units

Drain−to−Source Voltage

V_DS

-12

V

Drain−to−Gate Voltage (R_GS = 10 MΩ)

V_GS

±12

V

Drain Current−Continuous

I_D

-6

A

Drain Current -Pulsed (Note 1)

I_DM

-20

A

Maximum Power Dissipation

P_D

1.8

W

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to 150

℃

Thermal Resistance , Junction−to−Ambient (Note 2)

R_θJA

69

℃/W

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Off CHARACTERISTICS

Drain−to−Source Breakdown Voltage

BV_DSS

V_GS = 0V, I_D = -250μA

-12

-

-

V

Zero Gate Voltage Drain Current

I_DSS

V_DS =-20V, V_GS =0V

-

-

-1

μA

Gate−Body Leakage Current

I_GSS

V_GS = ± 12 V, V_DS =0V

-

-

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V_GS(th)

V_GS = V_GS, I_D = -250μA

-0.4

-0.65

-1.0

V

Static Drain−to−Source On−Resistance

R_DS(ON)

V_GS = -4.5V, I_D = -6A

-

21

30

mΩ

V_GS = -2.5V, I_D = -5A

-

28

45

Forward Transconductance

g_FS

V_DS = -5V, I_D = -6A

-

17

S

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

V_DS = -6 V, V_GS = 0 V,

f = 1.0 MHz

-

1300

-

pF

Output Capacitance

C_OSS

-

390

-

pF

Transfer Capacitance

C_RSS

-

300

-

pF

SWITCHING CHARACTERISTICS

Turn−On Delay Time

t_d(on)

VDD= -6V,ID= -1A R_L=6Ω,V_GEN=-4.5V,R_g=6Ω

-

25

-

nS

Rise Time

t_r

-

45

-

nS

Turn−Off Delay Time

t_d(off)

-

72

-

nS

Fall Time

t_f

-

60

-

nS

Total Gate Charge

Q_g

V_DS=-6V,I_D=-6A,V_GS=-4.5V

-

11.5

-

nC

Gate-Source Charge

Q_gs

-

1.5

-

nC

Gate-Drain Charge

Q_gd

-

3.2

-

nC

SOURCE−DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V_SD

VGS=0V,IS= -1.0A

-

-

-1.2

V

Diode Forward Current

I_S

-

-

-

6

A