Parameter | Symbol | Value | Units |
Continuous Reverse Voltage | VR | 200 | V |
Repetitive Peak Reverse Voltage | VRRM | 250 | V |
Continuous Forward Current (Note 1) | IF | 200 | mA |
Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to +150 | ℃ |
Note:
(1) Mounted on a ceramic substrate of 8 mm x 10 mm x 0.7 mm.
Parameter | Symbol | Conditions | Minimum | Typical | Maximum | Units |
Repetitive Peak Reverse Voltage | VRRM | IR = 100 uA (Note 1) | 250 | - | - | V |
Repetitive Peak Forward Current | IFRM | - | - | - | 625 | mA |
Forward Voltage | VF | IF = 100 mA | - | - | 1.0 | V |
IF = 200 mA | - | - | 1.25 | |||
Reverse Voltage Leakage Current | IR | VR = 200 V | - | - | 0.1 | uA |
VR = 200 V (TJ = 150 ℃) | - | - | 100 | |||
Power Dissipition | PD | - | - | - | 225 | mW |
Diode Capacitance | CD | VR = 0V, f = 1 MHz | - | - | 5 | pF |
Reverse Recovery Time | trr | IF = IR = 10 mA, RL = 100 ohm | - | - | 25 | ns |
Thermal Resistance (junction to ambient) | RθJA | - | - | - | 500 | °C /W |
Note:
(1) At zero life time measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V.
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