Symbol

Test Conditions

Min.

Typ.

Max.

Unit

I_D   Off-state current

V_D=V_DRM, V_G1(Line) = 0, V_G2 ≥ +5 V  T_A=25°C

T_A=85°C

V_D=V_DRM, V_G1(Line) = 0, V_G2 ≥ +5 V  T_A=25°C

T_A=85°C

-5

-50

+5

+50

μA

I_G1(Line)   Negative-gate Leakage current

V_G1(Line) = -220V

-5

μA

I_G2(Line)   Positive-gate Leakage current

V_G2(Line) = +220V

+5

μA

V_G1L(BO)  Gate-Line impulse breakover voltage

V_G1=-100V, I_T=-100A (see Note 6)     2/10μs

V_G1=-100V, I_T=-100A               10/100μs

-15

-11

V

V_G2L(BO)  Gate-Line impulse breakover voltage

V_G2=+100V, I_T=+100A (see Note 6)     2/10μs

V_G2=+100V, I_T=+100A              10/100μs

+15

+11

V

I_H    Negative holding current

V_G1=-60V, I_T=-1A, di/dt=1A/ms

-150

mA

I_G1T   Negative-gate trigger current

I_T=-5A, t_p(g)≥20μs, V_G1=-60V

+5

mA

I_G2T   Positive-gate trigger current

I_T=+5A, t_p(g)≥20μs, V_G2=+60V

+5

mA

C_O   Line-ground off-state capacitance

f=1MHz,V_D=-3V, G1 & G2 open circuit

110

pF