Parameter

Test Conditions

Min

Typ

Max

Unit

I_D

Off-state current

V_D = V_DRM, V_G1(Line) = 0, V_G2 ≥+5 V          T_A = 25 °C

T_A = 85 °C

V_D = V_DRM, V_G2(Line) = 0, V_G1 ≥ -5 V          T_A = 25 °C

T_A = 85 °C

-5

-50

+5

+50

µA

I_G1(Line)

Negative-gate leakage current

V_G1(Line) = -220 V

-5

µA

I_G2(Line)

Positive-gate leakage current

V_G2(Line) = +220 V

+5

µA

V_G1L(BO) 

Gate- Line impulse breakover voltage

V_G1 = -100 V, I_T = -100 A (see Note 6)         2/10 µs

V_G1 = -100 V, I_T = -30 A                  10/1000 µs

-15

-11

V

V_G2L(BO) 

Gate-Line impulse breakover voltage

V_G2 = +100 V, I_T  = +100 A (see Note 6)       2/10 µs

V_G2 = +100 V, I_T = +30 A                 10/1000 µs

+15

+11

V

I_H^-

Negative holding current

V_G1 = -60 V, I_T = -1 A, di/dt = 1 A/ms

-150

V

I_G1T

Negative-gate trigger current

I_T = -5 A, tp(g) ≥ 20 μs, V_G1 = -60 V

+5

℃

I_G2T

Positive-gate trigger current

I_T = 5 A, tp(g) ≥ 20 μs, V_G2 = 60 V

-5

℃

C_O     

Line–Ground off-state capacitance

f = 1 MHz, V_D= -3 V, G1 & G2 open circuit

32

pF