Rating

Symbol

Value

Units

Drain−to−Source Voltage

V_DS

-40

V

Drain−to−Gate Voltage

V_GS

±20

V

Drain Current

−Continuous @ TA = 25°C

−Continuous @ TA = 100°C

I_D

I_D

-13

-9

A

Total Power Dissipation

P_D

2.5

W

Operating and Storage Temperature Range

T_J,T_STG

-55 to 150

℃

Thermal Resistance

− Junction−to−Ambient (Note 2)

R_θJA

50

℃/W

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Off CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

BV_DSS

V_GS = 0V, I_D = 250μA

-40

-

-

V

Zero Gate Voltage Drain Current

I_DSS

V_DS = -40V, V_GS =0V

-

-

-1

μA

Gate−Body Leakage Current

I_GSS

V_GS = ± 20 V, V_DS =0V

-

-

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

V_GS(th)

V_GS = V_GS, I_D = 250μA

-1.3

-2.0

-2.5

V

Static Drain−to−Source On−Resistance (Note 3)

R_DS(ON)

V_GS = -10V, I_D = -12A

-

12

15

mΩ

Forward Transconductance (Note 3)

g_FS

V_DS -=15V, I_D = -10A

35

-

-

S

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

V_DS = -20 V, V_GS = 0 V,

f = 1.0 MHz

-

2800

-

pF

Output Capacitance

C_OSS

-

320

-

pF

Transfer Capacitance

C_RSS

-

220

-

pF

SWITCHING CHARACTERISTICS

Turn−On Delay Time

t_d(on)

VDS=-30V,RL=30Ω

VGS=-10V,RGEN=6Ω

-

11

-

nS

Rise Time

t_r

-

76

-

nS

Turn−Off Delay Time

t_d(off)

-

89

-

nS

Fall Time

t_f

-

35

-

nS

Gate-Source Charge

Q_g

VDS=-30V,ID=4.0A,

VGS=-10V

-

40

-

nC

SOURCE−DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V_SD

VGS=0V,IS=-4A

-

-

-1.2

V

Diode Forward Current

I_S

-

-

-13

A