Rating

Symbol

Value

Units

Drain−to−Source Voltage

V_DS

-30

V

Drain−to−Gate Voltage

V_GS

±20

V

Drain Current

−Continuous @ TA = 25°C

−Continuous @ TA = 100°C

−Single Pulse (tp ≤ 10 μs)(Note 1)

I_D

I_D

I_DM

-4.1

-3.0

-20

A

Total Power Dissipation

P_D

1.4

W

Operating and Storage Temperature Range

T_J,T_STG

-55 to 150

℃

Thermal Resistance

− Junction−to−Ambient (Note 2)

R_θJA

90

℃/W

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Off CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

BV_DSS

V_GS = 0V, I_D = 250μA

-30

-33

-

V

Zero Gate Voltage Drain Current

I_DSS

V_DS = -24V, V_GS =0V

-

-

-1

μA

Gate−Body Leakage Current

I_GSS

V_GS = ± 20 V, V_DS =0V

-

-

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

V_GS(th)

V_GS = V_GS, I_D = 250μA

-1

-1.5

-3

V

Static Drain−to−Source On−Resistance (Note 3)

R_DS(ON)

V_GS = -10V, I_D = -4.1A

-

55

65

mΩ

V_GS = -4.5V, I_D = -4.1A

-

75

95

Forward Transconductance (Note 3)

g_FS

V_DS -=5V, I_D = -4.1A

5.5

-

-

S

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

V_DS = -15 V, V_GS = 0 V,

f = 1.0 MHz

-

700

-

pF

Output Capacitance

C_OSS

-

120

-

pF

Transfer Capacitance

C_RSS

-

75

-

pF

SWITCHING CHARACTERISTICS

Turn−On Delay Time

t_d(on)

VDS=-15V,RL=3.63Ω

VGS=-10V,RGEN=3Ω

-

9

-

nS

Rise Time

t_r

-

5

-

nS

Turn−Off Delay Time

t_d(off)

-

28

-

nS

Fall Time

t_f

-

13.5

-

nS

Gate Charge

Q_g

VDS=-15V,ID=4.0A,

VGS=-10V

-

3.0

-

nC

SOURCE−DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V_SD

VGS=0V,IS=-1A

-

-

1.2

V

Diode Forward Current

I_S

-

-

-

5

A