Rating

Symbol

Value

Units

Drain−to−Source Voltage

V_DS

-20

V

Gate −to− Source

V_GS

±12

V

Drain Current

−Continuous @ TA = 25°C

−Single Pulse (tp ≤ 10 μs) (Note 1)

I_D

I_DM

-5

-20

A

Maximum Power Dissipation

P_D

1.2

W

Operating and Storage Temperature Range

T_J,T_STG

-55 to 150

℃

Thermal Resistance

− Junction−to−Ambient (Note 2)

R_θJA

110

℃/W

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Off CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

BV_DSS

V_GS = 0V, I_D = 250μA

-20

-

-

V

Zero Gate Voltage Drain Current

I_DSS

V_DS = -20V, V_GS =0V

-

-

-1

μA

Gate−Body Leakage Current

I_GSS

V_GS = ± 12 V, V_DS =0V

-

-

±100

nA

ON CHARACTERISTICS(Note 3)

Gate Threshold Voltage

V_GS(th)

V_GS = V_GS, I_D = 250μA

-0.6

-

-1

V

Static Drain−to−Source On−Resistance

R_DS(ON)

V_GS = -4.5V, I_D = -5A

-

49

60

mΩ

V_GS = -2.5V, I_D = -3A

-

83

100

Forward Transconductance

g_FS

V_DS =-10V, I_D =-5A

-

9

-

S

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

V_DS = -10V, V_GS = 0 V,

f = 1.0 MHz

-

610

-

pF

Output Capacitance

C_OSS

-

130

-

pF

Transfer Capacitance

C_RSS

-

100

-

pF

SWITCHING CHARACTERISTICS

Turn−On Delay Time

t_d(on)

VDS=-10V,ID=-5A VGS=-4.5V,RGEN=1Ω

-

27

-

nS

Rise Time

t_r

-

60

-

nS

Turn−Off Delay Time

t_d(off)

-

30

-

nS

Fall Time

t_f

-

10

-

nS

Gate Charge

Q_g

VDS=30V,ID=4.5A,

VGS=10V

-

9.6

-

nC

SOURCE−DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V_SD

VGS=0V,IS=1.7A

-

-

-1.2

V