Rating

Symbol

Value

Units

Drain−to−Source Voltage

V_DS

60

V

Drain−to−Gate Voltage (R_GS = 10 MΩ)

V_GS

±20

V

Drain Current

−Continuous @ TA = 25°C

−Continuous @ TA = 100°C

−Single Pulse (tp ≤ 10 μs)

I_D

I_D

I_DM

5

3.5

20

A

Total Power Dissipation @ TA = 25°C (Note 1)

Total Power Dissipation @ TA = 25°C (Note 2)

Derate above 25°C

P_D

2.0

1.2

0.017

W

Operating and Storage Temperature Range

T_J,T_STG

-55 to 150

℃

Thermal Resistance

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

R_θJA

R_θJA

62.5

98.5

℃/W

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Off CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

BV_DSS

V_GS = 0V, I_D = 250μA

60

69

-

V

Zero Gate Voltage Drain Current

I_DSS

V_DS = 60V, V_GS =0V

-

-

1

μA

Gate−Body Leakage Current

I_GSS

V_GS = ± 20 V, V_DS =0V

-

-

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage (Note 3)

V_GS(th)

V_GS = V_GS, I_D = 250μA

1.2

1.8

2.5

V

Static Drain−to−Source On−Resistance (Note 3)

R_DS(ON)

V_GS = 10V, I_D = 4.5A

-

38

45

mΩ

Forward Transconductance (Note 3)

g_FS

V_DS =5V, I_D = 4.5A

11

-

-

S

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

V_DS = 25 V, V_GS = 0 V,

f = 1.0 MHz

-

450

-

pF

Output Capacitance

C_OSS

-

60

-

pF

Transfer Capacitance

C_RSS

-

25

-

pF

SWITCHING CHARACTERISTICS

Turn−On Delay Time

t_d(on)

VDS=30V,ID=4.5A VGS=10V,RGEN=3Ω

-

4.7

-

nS

Rise Time

t_r

-

2.3

-

nS

Turn−Off Delay Time

t_d(off)

-

15.7

-

nS

Fall Time

t_f

-

1.9

-

nS

Gate Charge

Q_g

VDS=30V,ID=4.5A,

VGS=10V

-

8.5

-

nC

SOURCE−DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V_SD

VGS=0V,IS=3.7A

-

-

1.2

V

Diode Forward Current

I_S

-

-

5

A